spp2301a description applications the spp2301a is the p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration(sot-23-3l) part marking ? -20v/-2.8a,r ds(on) =130m ? @v gs =-4.5v ? -20v/-2.0a,r ds(on) =200m ? @v gs =-2.5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPP2301AS23RG sot-23-3l 1ayw SPP2301AS23RGb sot-23-3l 1ayw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP2301AS23RG : tape reel ; pb ? free SPP2301AS23RGb : tape reel ; pb - free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -20 v gate ?source voltage v gss 12 v t a =25 -3.0 continuous drain current(t j =150 ) t a =70 i d -2.0 a pulsed drain current i dm -10 a continuous source current(diode conduction) i s -1.6 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 120 /w spp2301a product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.45 -1.5 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -10 ua v ds Q -5v,v gs =-4.5v -6 on-state drain current i d(on) v ds Q -5v,v gs =-2.5v -3 a v gs =-4.5v,i d =-2.8a 0.095 0.130 drain-source on-resistance r ds(on) v gs =-2.5v,i d =-1.6a 0.165 0.200 ? forward transconductance gfs v ds =-5v,i d =-2.8a 6.5 s diode forward voltage v sd i s =-1.6a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 4.8 8 gate-source charge q gs 0.75 gate-drain charge q gd v ds =-6v,v gs =-4.5v i d -2.8a 1.3 nc input capacitance c iss 35 output capacitance c oss 150 reverse transfer capacitance c rss v ds =-6v,v gs =0v f=1mhz 60 pf t d(on) 10 20 turn-on time t r 32 45 t d(off) 38 55 turn-off time t f v dd =-6v,r l =6 ? i d -1.0a,v gen =-4.5v r g =6 ? 30 50 ns spp2301a product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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